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|  MIL-C-70491(AR)
Memory Test Connections
P1-A45
to
P1-B45
P1-A1
to
P1-A33
P1-A46
to
P1-B46
P1-A1
to
P1-B23
P1-A47
to
P1-B47
P1-A19
to
P1-B19
P1-A48
to
P1-B48
P1-A43
to
P1-B43
P1-A25
to
P1-B1
P1-A44
to
P1-B44
4.6.5 RAM write cycle.
Write to RAM with hexadecimal data (01) using the RAM
write cycle specified in 3.2.1.3.
b. -Verify the data written to RAM is correct by reading
data from RAM using the memory read cycle described in 3.2.1.2.
Rotate to the right by 1 bit the data in the memory
c.
location being tested and reverify the data for each rotation.
Data shall be written as in a. thru c. to the full
d.
range of RAM from hexadecimal address (F800) to address (FFFF).
e. Write to the full range of RAM from hexadecimal
address (F800) to address (FFFF) with hexadecimal data (00) using
the RAM write cycle specified in 3.2.1.3.
f. Write to the RAM location being tested with
hexadecimal data (FF) using the RAM write cycle specified in
3.2.1.3.
g. Verify that all RAM addresses that differ from the
test address by 1 bit contain hexadecimal data (00) by using the
memory read cycle described in 3.2.1.2.
Data shall be written as in e. thru g. to the full
h.
range of RAM from hexcidecimal address (F800) to address (FFFF).
4.6.6 EPROM program cycle. An EPROM program cycle shall be
accomplished by applying the signals specified in Figure 3.4 and
Table 1. P1-A39 shall have the input parameters as specified on
the EPROM's respective drawing.
4.6.7 EPROM erasure. The EPROM shall be erased by exposing
the transparent window to high intensity ultraviolet light. A
light source with a wavelength of 2537 Angstroms yielding. a
minimum integrated dosage of 15 w-soO\cm(2) is required. An
ultraviolet light source with a power of 12,000 microwatts\cm(2)
placed within 1 inch of the window will erase the EPROM in 20
minutes. The EPROM shall be erased when requirement 3.2.1.5 is
met.
19
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