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MIL-M-38510/108A
1.3 Absolute maximum ratings. 1/
40 V dc 2/
Collector base voltage ............................................................
15 V dc 2/
Collector emitter voltage ..........................................................
Collector substrate voltage ....................................................
60 V dc 3/
Emitter base voltage ...............................................................
5 V dc 2/
300 mW 2/
Power dissipation .....................................................................
50 mA 2/
Collector current ........................................................................
-65C to +150C
Storage temperature range .......................................................
+175C
Junction temperature ...............................................................
+300C
Lead temperature (soldering, 60 seconds) ................................
1.4 Recommended operating conditions.
Collector base voltage ............................................................ 32 V dc 2/
Collector emitter voltage .......................................................... 12 V dc 2/
Ambient operating temperature range ....................................... -55C TA +125C
1.5 Power and thermal characteristics.
Maximum θJC
Maximum θJA
Maximum allowable power dissipation
Case outline
350 mW @ TA = 125C
60C/W
140C/W
A, D, M
400 mW @ TA = 125C
40C/W
120C/W
C
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications and standards. The following specifications and standards form a part of this specification to
the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-38535
- Integrated Circuits (Microcircuits) Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883
- Test Method Standard for Microelectronics.
MIL-STD-1835
- Interface Standard Electronic Component Case Outlines.
(Copies of these documents are available online at http://assist.daps.dla.mil;quicksearch/ or www.dodssp.daps.mil
or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.
2.3 Order of precedence. In the event of a conflict between the text of this specification and the references cited
herein the text of this document shall takes precedence. Nothing in this document, however, supersedes applicable
laws and regulations unless a specific exemption has been obtained.
______
1/ The collector of each transistor is isolated from the substrate by an integral diode. The substrate must be
connected to the most negative point in the external circuit to maintain isolation between transistors and to
provide for normal transistor action.
2/ Rating applies to each transistor within the array.
3/ Does not apply to Q5 of device type 02, refer to VCEO rating.
2

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