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Page Title:
Table 4H. Programming characteristics for circuit H. |
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|  MIL-M-38510/207E
TABLE IVH. Programming characteristics for circuit H.
Limits
Unit
Parameter
Symbol
Conditions
Min
Recommended
Max
Programming voltage
ICCP = 425 75 mA;
8.5
8.75
9.0
V
VCCP 1/
to VCC
transient or steady-state
Verification upper limit
5.3
5.5
5.7
V
VCCVH
Verification normal limit
4.75
5.0
5.25
V
VCCVN
Verification lower limit
4.3
4.5
4.7
V
VCCVL
Verify threshold
1.4
1.5
1.6
V
VS 2/
Programming supply
350
500
mA
VCCP = +8.75 0.25 V
ICCP
current
Input voltage high level
2.4
5.5
V
VIH
"1"
Input voltage low level
0
0.8
V
VIL
"0"
μA
Input current
50
IIH
VIH = +5.5 V
μA
Input current
-500
IIL
VIL = +0.4 V
Forced output voltage
IOUT = 200 20 mA,
17
17.5
18.0
V
VOPF 3/
(program)
transient or steady-state
Forced output current
180
220
mA
VOPF = +17 1 V
IOPF
(program)
μs
Output pulse rise time
17
20
25
tRZ
CE programming pulse
μs
10
10
25
tP
width
μs
Pulse sequence delay
5
10
tD
Address program verify
1
ms
tPVA
cycle
Memory program verify
20
sec
tPVM
time (continuous)
Fusing attempts per link
1
cycle
FL
1/ Bypass VCC to GND with a 0.01 μF capacitor to reduce voltage spikes.
2/ VS is the sensing threshold of the PROM output voltage for a programmed bit. It normally constitutes the
reference voltage applied to a comparator circuit to verify a successful fusing attempt.
3/ The voltage should be maintained within specified limits during the entire fusing cycle. For a transient current of
150 mA, limit voltage spikes to a maximum slew rate of 2 V/μs and 10 μs maximum recovery.
33
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