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|  MIL-C-70490(AR)
exposure the temperature of the chamber shall be reduced 10C
0
(18 F) per minute plus or minus 1C (1.8F) to room ambient
temperature (as specified in 3.3.1). The above procedure shall be
conducted a minimum of ten times. Upon completion of the cycles
the memory shall then be removed from the chamber and subjected to
the tests in 4.6.3 and 4.6.9 inclusive. It shall meet the
requirements of 3.2.1.1 and 3.2.1.7 inclusive.
4.6.2 ESS vibration. Conduct the vibration test with the
memory positioned on an appropriate adapter affixed to a vibrating
machine that is capable of providing the amplitudes and
frequencies specified in 3.3.3. Unless otherwise specified, the
test equipment shall be in accordance with the "Test Facilities"
requirements of MIL-F-13926. The applied motion shall be in two
separate planes for the time period specified. Upon completion of
the vibration sweep the memory shall be removed from the vibration
adapter and shall be subjected to the tests in 4.6.3 and 4.6.9
inclusive. It shall meet the requirements of 3.2.1.1 and 3.2.1.7
inclusive.
4.6.3 Memory read cycle. Tests 4.6.3 and 4.6.4 shall be
performed by first connecting the following connector contacts
together and then applying a 5.3 plus or minus .1 volt DC power
supply to P1-A1 (+5V) , P1-A18 (+5V), and P1-A33 (EPROM +5V) , all
with respect to P1-131 (GND). Before reading from EPROM, 1 upper
bank and 1 lower bank shall be enabled by loading registers U36
and u37 with the following data. Verify the data in EPROM by
using the memory read cycle described in 3.2.1.1. The data shall
be verified from hexadecimal address (4000) to address (BFFF) for
each of the 4 banks.
Reqister U37
Upper Bank
0000
0
0001
1
0010
2
0011
3
Register U36 Data
Lower Bank
0000
0
0001
1
0010
2
0011
3
I
4.6.4 RAM write cycle.
a. Write to RAM with hexadecimal data (01) using the RAM
write cycle specified in 3.2.1.2.
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