 |
|||
|
|
|||
| ||||||||||
|
|  MIL-I-48831A(AR)
4.5 Test methods and procedures
4. 5.1 Physical dimensions. The IC shall be tested for the
requirements of Method 2016, of MIL-STD-883. Any IC failing to
comply with all of the requirements of 3.4 shall be classified
defective (Non-destructive test).
4.5.2 Bond strength. The IC shall be tested for the
requirements of Method 2011, Test Condition D of MIL-STD-883
using Government approved test equipment. Any IC failing to
comply with all of the requirements of 3.7 shall be classed
defective (Destructive test).
4.5.3 Lead fatigue. The IC shall be tested for the
requirements of Method 2004, Test Condition B2 of MIL-STD-883
using Government approved test equipment. Any IC failing to
comply with all of the requirements of 3.10 shall be classed
defective (Destructive test).
4.5.4 Die bond shear strength. The IC shall be tested for
the requirements of Methid 2019, of MIL-STD-883 using
Government approved test equipment. Any IC failing to comply
with all of the requirements of 3.8 shall be classed defective
(Destructive test).
4.5.5 Conditioning screentests. The IC shall be subjected
to the required tests using Government approved test
equipment. Any IC failing to comply with all of the
requirements of 3.12 shall be classed defective. Testing is
non-destructive and only IC's that pass all of the specified
tests shall be returned to the lot.
4.5.6 Pre-Cap visual (DE-LID). The IC chip prior to
capping shall be inspected for the requirements of Method 2001
Test Condition B of MIL-STD-883. Any "chip" failing to comply
with all of the requirements of 3.9 shall be classed
defective.
(Destructive test)
4.5.7 Solderability. The IC shall be inspected for proper
wetting as required in Method 2003 of MIL-STD-883. Any lead
failing to comply with all of the requirements of 3.5 shall be
classed defective (Destructive test).
18
|
|
Privacy Statement - Press Release - Copyright Information. - Contact Us |
Click
here for thousands of PDF manuals