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|  MIL-I-48331A(AR)
4.5.8 Resistance to solvents. The IC marking shall meet
the requirements of Method 2016, of MIL-STD-883. Any package
failing to comply with all of the requirements of 3.6 shall be
classed defective (Destructive test).
4.5.9 Dynamic burn-in. All I.CI's shall be subjected to a
dynamic burn-in test shall be performed at a temperature of one
hundred twenty-five degrees centigrade (+125C) for forty
eight (48) hours with the IC connected as shown in figure 18.
When the test is completed, the IC shall be cooled to
twenty-five degrees (25C) centigrade and the Electrical
Tests delineated in Table II shall be performed.
4.5.10 Post burn-in electrical parameters. The test
methods which follow are intended to convey the idea of what is
to be tested and provide a simple bench method of doing it. It
is recognized that automatic (computerized) tests will differ
as to implementation of the test.
4.5 .10.1 Leakage current. The microcircuit shall be
connected as shown in figure 9a. The supply voltage VDD shall
be applied between terminals 16 and ground. A minimum of 50
milliseconds shall elapse before measuring the leakage
current. After measuring the current with the microcircuit
configured as shown in figure 9a, terminals 2 and 10 shall be
switched from ground to VDD (See figure 9b). The leakage
current with the microcircuit connected as shown in figure 9b
shall be measured. Leakage currents shall be as specified in
Table II.
4.5.10.2 Oscillator function current. The microcircuit
shall be connected as shown in figure 4. VDD shall be applied
to terminal 16 with terminal 4 connected to the delay network
shown in figure 8a. After a minimum of 100 millisecond delay
from application of VDD, terminal 4 shall be connected directly
to VDD. The oscillator average current shall be measured over
at least five (5) periods and shall be as specified in Table
II. VDD rise time shall be 1.0 millisecond for all tests and
sequential operation tests except long self destruct (SD) time
test. A rise time of 500 milliseconds shall be used for the
long SD time test.
4.5.10.3 Output period. With the microcircuit connected
as shown in figure 4 and after the oscillator current has been
measured, the Primary and Barrier oscillator periods shall be
measured by connecting an approved frequency counter to
terminals 3 and 11 respectively. The periods shall be as
specified in Table II.
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