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Page Title:
Table 1. Electrical performance characteristics. |
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|  MIL-M-38510/108A
TABLE I. Electrical performance characteristics.
Temperature
Device
Limits 1/
Unit
Conditions
Test
Symbol
range
type
Min
Max
IC = 10 A, IE = 0
-55C ≤ TA ≤ +125C
Breakdown voltage,
V(BR)CBO
01, 02
40
V
collector to base
-55C ≤ TA ≤ +125C
Breakdown voltage,
V(BR)CEO
IC = 1 mA, IB = 0
01, 02
15
V
collector to emitter
IC = 10 A
-55C ≤ TA ≤ +125C
V(BR)CUO
Breakdown voltage,
01, 02
60
V
collector to substrate
2/
IE = 10 A, IC = 0
-55C ≤ TA ≤ +125C
V(BR)EBO
Breakdown voltage,
01, 02
5.0
V
emitter to base 2/
-55C ≤ TA ≤ +25C
01, 02
Collector to base
ICBO
VCB = 35 V, IE = 0
10
nA
cutoff current
TA = +125C
A
0.2
-55C ≤ TA ≤ +25C
01, 02
Collector to emitter
ICEO
VCE = 10 V, IB = 0
10
nA
cutoff current
TA = +125C
A
1.0
-55C ≤ TA ≤ +25C
ICEO(D)
01
Collector to emitter
VCE = 10 V, IB = 0
20
nA
cutoff current
TA = +125C
A
50
(Darlington pair) 3/
-55C ≤ TA ≤ +25C
01, 02
nA
Collector to substrate
ICUO
VCU = 40 V
10
cutoff current 2/
TA = +125C
200
-55C ≤ TA ≤ +25C
01, 02
nA
Emitter to base cutoff
IEBO
VEB = 4 V, IC = 0
10
current
TA = +125C
200
-55C ≤ TA ≤ +25C
Collector to emitter
VCE(sat)
IC = 10 mA, IB = 1 mA
01, 02
0.400
V
voltage (saturated)
TA = +125C
0.600
+25C ≤ TA ≤ +125C
01, 02
V
Base emitter voltage
VBE(sat)
IC = 10 mA, IB = 1 mA
1.0
(saturated)
TA = -55C
1.1
TA = +25C
Base emitter voltage
VBE
VCE = 3 V, IE = -1 mA
0.600
0.800
01, 02
V
(unsaturated)
TA = +125C
0.450
0.650
TA = -55C
0.750
0.950
TA = +25C
01, 02
V
Base emitter voltage
VBE
VCE = 3 V, IE = -10 mA
0.900
(unsaturated)
TA = +125C
0.750
TA = -55C
1.000
TA = +25C
01
V
VBE(D)
1.100
1.500
Base emitter voltage
VCE = 3 V, IE = -1 mA
(unsaturated),
TA = +125C
0.700
1.100
Darlington pair 3/
TA = -55C
1.500
1.900
TA = +25C
01
V
Base emitter voltage
VBE(D)
VCE = 3 V, IE = -10 mA
1.600
(unsaturated),
TA = +125C
1.200
Darlington pair 3/
TA = -55C
2.00
TA = +25C
01, 02
mV
|VBEQ1 -
VCE = 3 V, IE = -1 mA
2.0
Input offset voltage,
differential pair 4/
VBEQ2|
-55C ≤ TA ≤ +125C
3.0
TA = +25C
VCE = 3 V, IE = -1 mA
01, 02
mV
Input offset voltage
|VBEQA -
2.0
VBEQB|
for pairs of isolated
-55C ≤ TA ≤ +125C
3.0
transistors 5/ 6/ 7/
See footnotes at end of table.
4
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