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Programming procedure for circuit B. |
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|  MIL-M-38510/207E
4.8 Programming procedure for circuit B. The programming characteristics in table IVB and the following
procedures shall be used for programming the devices:
a. Connect the device in the electrical configuration for programming. The waveforms on figure 5B and
the programming characteristics of table IVB shall apply to these procedures.
b. Raise VCC to 5.5 volts.
c. Address the PROM with binary address of the selected word to be programmed.
Address inputs are TTL compatible.
d. Disable the chip by applying VIH to the CE input. CE input is TTL compatible.
e. Apply the VPP pulse to the CE pin. In order to insure that the output transistor is off before increasing
the voltage on the output pin, the program pin's voltage pulse shall precede the output pin's programming
pulse by tD1 and leave after the output pin's programming pulse by tD2 (see figure 5B).
f. Apply the VOUT pulse with duration of tP to the output selected for programming (see table IVB).
The outputs shall be programmed one output at a time, since internal decoding circuitry is capable of
sinking only one unit of programming current at a time. Note that the PROM is supplied with fuses
generating a high-level logic output. Programming a fuse will cause the output to go to a low-level logic
in the verify mode.
g. Other bits in the same word may be programmed sequentially applying VOUT pulses to each output to be
programmed.
h. Repeat 4.8b through 4.8g for all bits to be programmed.
i. Enable the chip by applying VIL to the CE input and verify the program.
Verification may check for a low output by requiring the device to sink 12 mA at VCC = 4.0 V and
0.2 mA at VCC = 7.0 V at TC = 25C.
j. For classes S and B devices, if any bit does not verify as programmed it shall be considered a
programming reject.
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