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|  MIL-M-38510/231C
NOTES:
1/ The ICC are as follows:
25C
125C
-55C
Device type
01, 02, 05, 06,
155 mA
130 mA
170 mA
07, 08, 09, 10, 14
03, 04, 13
65 mA
55 mA
75 mA
11, 12, 15
80 mA
70 mA
90 mA
2/ Toggle from ≥ 3.0 V to 0.4 V and return.
3/ The functional tests shall verify the truth table of figure 3. All bits shall be tested. Terminal conditions shall be as
follows:
a.
Inputs: H = 2.4 V, L = 0.4 V.
Outputs: Output voltage shall be H ≥ 1.5 V and L < 1.5 V when using a high-speed checker single
b.
comparator.
c.
The functional tests shall be performed with VCC = 4.5 and VCC = 5.5 V.
4/ GALPAT. This program will test all bits in the array, the addressing and interaction between bits for ac
performance tAVQV, tSVQV, tSCQV, tWZQV, and tWHQV, the memory is initialized by writing a field of "H" and then a field of
"L".
Description:
1.
Write an "H" in word 0.
2.
Word 0 is read.
3.
Word 1 is read.
4.
Word 0 is read
5.
Word 2 is read.
6.
Word 0 is read.
7.
The reading procedure continues back and forth between word 0 and the next higher numbered word until
word 1024 is reached, then increments to the next word and reads back and forth as in steps 1 through 7
and shall include all words.
2
Pass execution time = (n + n) x cycle time. n = 1024.
8.
9.
The GALPAT tests shall be performed with VCC = 4.5 and 5.5 V.
5/ The outputs shall be loaded per load A of figure 5.
6/ Galloping Galwresh (with row column ping pong read GGII)
The Galloping Galwresh (GG) is started by first writing a field of zeros and then a field of ones into the memory
under test (MUT). The following sequence is then performed.
Test Bit
R "1"
Write "0"
R "0"
W "1"
Background bit
R "1"
R "1"
R "1"
R "1"
The background bits are read in ping-pong fashion in the Row/Column of the test bit. The sequence is repeated
for the next test bit (Y advancing X) until the test bit reaches Xmax Ymax. The inverse pattern is then performed
with VCC = 4.5 and 5.5 V.
7/ For device type 05 and 06, tWHAC and tAVWL = 10 ns.
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