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Page Title:
Total dose irradiation testing. |
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|  MIL-M-38510/758B
TABLE III. Delta limits at 25C.
Parameter 1/
Device types
Limits
100 nA
ICCH, ICCL
All
1/ The above parameters shall be recorded before and
after the required burn-in and life tests to determine deltas (Ć).
4.4.4 Group D inspection. Group D inspection shall be in accordance with table V of MIL-PRF-38535. End-point electrical
parameters shall be as specified in table II herein.
4.4.5 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness
assured (see 3.7 herein). RHA levels for device classes B and S shall be as specified in MIL-PRF-38535.
a. End-point electrical parameters shall be as specified in table II herein.
b. For device classes B and S, subgroups 1 and 2 in table V, method 5005 of MIL-STD-883 shall be tested as
appropriate for device construction.
c. RHA tests for device classes B and S for levels M, D, P, L, and R shall be performed through each level to
determine at what levels the devices meet the RHA requirements. These RHA tests shall be performed for initial
qualification and after design or process changes which may affect the RHA performance of the device.
d. Prior to irradiation, each selected sample shall be assembled in its qualified package. It shall pass the specified
group A electrical parameters in table I for subgroups specified in table II herein.
e. For device classes B and S, the devices shall be subjected to radiation hardness assurance tests as specified in
MIL-PRF-38535 for the RHA level being tested. All device classes must meet the postirradiation end-point
electrical parameter limits as defined in table I at TA = +25C 5C, after exposure, to the subgroups specified in
table II herein.
4.4.5.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883,
method 1019, condition A, and as specified herein. Prior to and during total dose irradiation characterization and testing, the
devices for characterization shall be biased so that 50 percent are at inputs high and 50 percent are at inputs low, and the
devices for testing shall be biased to the worst case condition established during characterization. Devices shall be biased
as follows:
a. Input tested high, VCC = 5.5 V dc +5%, RCC = 10Ω +20%, VIN = 5.0 V dc +5%, RIN = 1 kΩ +20%, and all outputs
are open.
b. Inputs tested low, VCC = 5.5 V dc +5%, RCC = 10Ω +20%, VIN = 0.0 V dc, RIN = 1 kΩ +20%, and all outputs are
open.
4.4.5.1.1 Accelerated aging test. Accelerated aging shall be performed on class B and S devices requiring an RHA level
greater that 5k rads (Si). The post-anneal end-point electrical parameter limits shall be as specified in table I herein and
shall be the preirradiation end-point electrical parameter limit at +25C 5C. Testing shall be performed at initial
qualification and after any design or process changes which may affect the RHA response of the device.
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