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Sequential test (programmed PROM) |
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|  MIL-M-38510/203E
8/
GALPAT (PROGRAMMED PROM)
This program will test all bits in the array, the addressing and interaction between bits for ac performance, tPHL1, and
tPLH1. Each bit in the pattern is fixed by being programmed with a "H" or "L".
Description
1. Word 0 is read.
2. Word 1 is read
3. Word 0 is read
4. Word 2 is read
5. Word 0 is read
6. The reading procedure continues back and forth between word 0 and the next higher numbered word until word
255 is reached, then increments to the next word and reads back and forth as in steps 1 through 6 and shall
include all words.
7. Pass execution time = (n2 + n) x cycle time. n = 256.
8. The GALPAT tests shall be performed with VCC = 4.5 V and 5.5 V.
9/ The outputs are loaded per figure 5.
10/ SEQUENTIAL TEST (PROGRAMMED PROM)
This program will test all bits in the array for tPHL2 and tPLH2.
Description
1. Each word in the pattern is tested from the enable lines to the output lines for recovery.
2. Word 0 is addressed. Enable line is pulled hi to lo and lo to hi. tPHL2 and tPLH2 are read.
3. Word 1 is addressed. Same enable sequence as above.
4. The reading procedure continues until word 255 is reached.
5. Pass execution time = 256 x cycle time.
6. The sequential tests shall be performed with VCC = 4.5 V and 5.5 V
11/ The limits shall be as follows:
Device 01,02
Device 03,04
TPHL1
75 ns
TPHL1
35 ns
TPLH1
75 ns
TPLH1
35 ns
TPHL2
35 ns
TPHL2
20 ns
TPLH2
35 ns
TPLH2
20 ns
12/ For unprogrammed circuit G devices; apply 11.0 V on pin 7 (A2).
24
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