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MIL-M-38510/231C
TABLE I. Electrical performance characteristics.
Units
Limits
Test
Symbol
Conditions 1/
Device
-55C TC +125C
Type
Min
Max
unless otherwise specified
High-level output voltage
VOH
VCC = 4.5 V  VIN = 2.1 V
02, 04, 06, 08,
2.4
V
IOH = -5.2 mA
10, 12, 13, 14, 15
0.45
V
Low-level output voltage
VOL
VCC = 4.5 V  IOL = 16 mA
01-08, 13
VIN = 0.8 V
IOL = 8 mA
09-12, 14, 15
A
High level input current
IIH1
VCC = 5.5 V
All
40
VIN = 5.5 V
A
Low level input current
IIL
VCC = 5.5 V
01-08, 13
-1.0
-400
VIN = 0.45 V
09-12, 14, 15
-10.0
-300
A
100
Output leakage
ICEX
VCC = 5.5 V
VOH = 5.5 V
01, 05
VOH = 4.5 V
03, 07, 09, 11
mA
Output current, short
IOS
VCC = 5.5 V
02, 04, 06, 08, 13
-20
-100
VOUT = GND 2/
circuit to ground
10, 12, 14, 15
-10
-70
A
High-impedence (off-state)
IOHZ
VCC = 5.5 V
VOH = 2.4 V
04, 08, 10, 12,
50
output high current
13, 14, 15
A
VOH = 4.5 V
02, 06
50
A
02, 04, 06, 08,
-50
High-impedence (off-state)
IOLZ
VCC = 5.5 V
VOL = 0.45 V
10, 12, 13, 14, 15
output low current
-1.5
V
Input diode clamping voltage
VIC
VCC = 5.5 V
IIN = -12 mA
01, 02, 05, 06
TA = 25C
IIN = -10 mA
03, 04, 07, 8-15
Supply current
ICC
VCC = 5.5 V 3/
01, 02, 05-10, 14
170
mA
03, 04, 13
75
11, 12, 15
90
VCC = 4.5 V and 5.5 V
Address access time
tAVQV
01, 02, 05, 06,
60
ns
CL = 30 pF
09, 10
See figure 5
03, 04
70
07, 08, 14
45
11, 12
75
13
50
15
55
Chip select time
tSVQV
01-06, 09-12
45
ns
07, 08, 13, 14
35
15
40
Chip select output disable time
tSCQV
01, 03, 05
50
ns
07
35
09, 11
45
Write recovery time
tWHQV
01, 02, 05, 06, 09
50
ns
10, 11, 12
03, 04
55
07, 08
40
13, 14
40
15
45
Output select time
tELQV
14
35
ns
15
40
Output select disable time to
tEHQZ
14
35
ns
high Z
15
40
Write setup time
tWLQV
01, 03, 05, 09, 11
45
ns
07
35
ns
Write pulse width
tWLWH
01, 02, 05, 06,
40
09, 10, 15
03, 04
50
07, 08, 13, 14
35
11, 12
55
4

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