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MIL-M-38510/245B
TABLE VI. Post-irradiation end-point electrical parameters 1/
Limits
Test
Symbol
Conditions
Device
Unit
VSS = 0 V, TC = +25C
type
Min
Max
Low level output
VDD = 4.5 V
IOL = 2 mA
03, 04
0.4
V
VOL
voltage
Output low drive
05
2.5
VDD = 4.75 V
VOUT = 0.4 V
mA
IOL
current
06
1.7
High level output
VOH
VDD = 4.5 V
IOH = -1 mA
03, 04
2.4
V
voltage
Output high drive
05
2.0
VDD = 4.75 V
VOUT = 4.35 V
mA
IOH
current
06
1.1
Input leakage
IIH
1
A
VDD = 5.5 V
VIN = rail
03, 04
current
IIL
10
VDD = 5.25 V
VIN = rail
05, 06
High impedance
IOHZ
10
A
VDD = 5.5 V
VOUT = rail
03, 04
IOLZ
output leakage
30
VDD = 5.25 V
VOUT = rail
05
50
06
Quiescent supply
A
IDD
VDD = 5.5 V
03
200
current
04
250
ISS
VDD = 5.25 V
05, 06
1,000
Operating current
mA
IDDOP
VDD = 5.5 V
f = 1 MHz
03, 04
7
VDD = 5.25 V
f = 1 MHz
05
4
06
6
Address access
tAVQV
See table III
03, 04
320
ns
time
05, 06
250
Read or write
tELEL
See table III
03, 04
420
ns
cycle time
tAVAV
See table III
05, 06
250
A
Data retention
ICCDR
VDD = 3 V IOUT = 0, VIN = rail
03, 04
100
quiescent supply
voltages
current.
VDD = 2.5 V IOUT = 0, VIN = rail
50
400
voltages
06
500
The pre-irradiation end-point electrical parameter limit shall be as specified in table III herein at +25C.
1/
71

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